Re: Asynchronous DRAM Self-Refresh

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От Josh Berkus
Тема Re: Asynchronous DRAM Self-Refresh
Дата
Msg-id 5563D742.7070504@agliodbs.com
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Ответ на Asynchronous DRAM Self-Refresh  (Josh Berkus <josh@agliodbs.com>)
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On 05/23/2015 10:49 AM, Jeremy Harris wrote:
> On 22/05/15 22:30, Josh Berkus wrote:
>> At CoreOS Fest, Intel presented about a technology which they used to
>> improve write times for the nonrelational data store Etcd.  It's called
>> Asynchronous DRAM Self-Refresh, or ADR.  This is supposedly a feature of
>> all of their chips since E5 which allows users to designate a small area
>> of memory (16 to 64MB) which is somehow guaranteed to be flushed to disk
>> in the event of a power loss (the exact mechanism was not explained).
>>
>> So my thought was "Hello!  wal_buffers?"  Theoretically, this feature
>> could give us the benefits of aynchronous commit without the penalties
>> ... *if* it actually works.
>>
>> However, since then I've been able to find zero documentation on ADR.
>> There's a bunch of stuff in the Intel press releases, but zero I can
>> find in their technical docs.  Anyone have a clue on this?
>>
> Are you certain disk was mentioned?  The wording at
> 
>  http://www.intel.com/design/intarch/iastorage/xeon.htm
> 
> "to preserve critical data in RAM during a power fail"
> implies not.  I assume there's a battery backup for
> just that memory region, and the chip does its own refresh
> rather than needing a controller; the data should still
> be recoverable on next boot.
> 

No, I'm not at all certain; like I said, I've had difficulty finding
documentation on the feature.

-- 
Josh Berkus
PostgreSQL Experts Inc.
http://pgexperts.com



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