Re: Asynchronous DRAM Self-Refresh

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От Jeremy Harris
Тема Re: Asynchronous DRAM Self-Refresh
Дата
Msg-id 5560BD92.5020907@wizmail.org
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Ответ на Asynchronous DRAM Self-Refresh  (Josh Berkus <josh@agliodbs.com>)
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On 22/05/15 22:30, Josh Berkus wrote:
> At CoreOS Fest, Intel presented about a technology which they used to
> improve write times for the nonrelational data store Etcd.  It's called
> Asynchronous DRAM Self-Refresh, or ADR.  This is supposedly a feature of
> all of their chips since E5 which allows users to designate a small area
> of memory (16 to 64MB) which is somehow guaranteed to be flushed to disk
> in the event of a power loss (the exact mechanism was not explained).
> 
> So my thought was "Hello!  wal_buffers?"  Theoretically, this feature
> could give us the benefits of aynchronous commit without the penalties
> ... *if* it actually works.
> 
> However, since then I've been able to find zero documentation on ADR.
> There's a bunch of stuff in the Intel press releases, but zero I can
> find in their technical docs.  Anyone have a clue on this?
> 
Are you certain disk was mentioned?  The wording at
http://www.intel.com/design/intarch/iastorage/xeon.htm

"to preserve critical data in RAM during a power fail"
implies not.  I assume there's a battery backup for
just that memory region, and the chip does its own refresh
rather than needing a controller; the data should still
be recoverable on next boot.
-- 
Cheers, Jeremy




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